silicon epitaxial pnp transistor semelab limited reserves the right to change test c onditions, parameter limits and package dimensions without notice. information furnished by semelab is believed to be both accurate and reliable at the time of going to press. however semelab assumes no responsibility for any errors or omissions discovered in its use. semelab encourage s customers to verify that datasheets are current before placing o rders. semelab limited semelab limited semelab limited semelab limited coventry road, lutterworth, leicestershire, le17 4 jb telephone +44 (0) 1455 556565 fax +44 (0) 1455 5526 12 email: sales@semelab-tt.com website: http://www.semelab-tt.com document number 5981 issue 3 page 1 of 3 2N5883 ? high voltage, low saturation voltages. ? hermetic to3 metal package. ? designed for power switching and linear applications ? screening options available absolute maximum ratings (t c = 25c unless otherwise stated) v cbo collector ? base voltage -60v v ceo collector ? emitter voltage -60v v ebo emitter ? base voltage -5v i c continuous collector current -25a i cm peak collector current -50a i b base current -7.5a p d total power dissipation at t c = 25c 200w derate above 25c 1.14w/c t j junction temperature range -65 to +200c t stg storage temperature range -65 to +200c thermal properties symbols parameters max. units r jc thermal resistance, junction to case 0.875 c/w
silicon epitaxial pnp transistor 2N5883 semelab limited semelab limited semelab limited semelab limited coventry road, lutterworth, leicestershire, le17 4 jb telephone +44 (0) 1455 556565 fax +44 (0) 1455 5526 12 email: sales@semelab-tt.com website: http://www.semelab-tt.com document number 5981 issue 3 page 2 of 3 electrical characteristics (t c = 25c unless otherwise stated) symbols parameters test conditions min. typ max. units v (br)ceo (1) collector-emitter breakdown voltage i c = -50ma -60 v v ce = -60v v be = 1.5v -1.0 i cev collector cut-off current t c = 150c -10 i ceo collector cut-off current v ce = -30v i b = 0 -2 i cbo collector cut-off current v cb = -60v i e = 0 -1.0 i ebo emitter cut-off current v eb = -5v i c = 0 -1.0 ma i c = -3a v ce = -4v 35 i c = -10a v ce = -4v 20 100 h fe (1) forward-current transfer ratio i c = -25a v ce = -4v 4 v be (1) base-emitter voltage i c = -10a v ce = -4v -1.5 i c = -15a i b = -1.5a -1.0 v ce(sat) (1) collector-emitter saturation voltage i c = -25a i b = -6.25a -4 v be(sat) (1) base-emitter saturation voltage i c = -25a i b = -6.25a -2.5 v dynamic characteristics i c = -1.0a v ce = -10v f t transition frequency f = 1.0mhz 4 mhz v cb = -10v i e = 0 c obo output capacitance f = 1.0mhz 1000 pf t r rise time 0.7 t s storage time 1.0 t f fall time v cc = -30v i c = -10a i b1 = -i b2 = -1.0a 0.8 s notes notes notes notes (1) pulse width 300us, 2%
silicon epitaxial pnp transistor 2N5883 semelab limited semelab limited semelab limited semelab limited coventry road, lutterworth, leicestershire, le17 4 jb telephone +44 (0) 1455 556565 fax +44 (0) 1455 5526 12 email: sales@semelab-tt.com website: http://www.semelab-tt.com document number 5981 issue 3 page 3 of 3 mechanical data dimensions in mm (inches) to3 (to - 204aa) metal package underside view pin 1 - base pin 2 - emitter case - collector 1 2 3 (case) 25.15 (0.99)26.67 (1.05) 10.67 (0.42)11.18 (0.44) 38 . 61 ( 1 . 52 ) 39 . 12 ( 1 . 54 ) 29 . 9 ( 1 . 177 ) 30 . 4 ( 1 . 197 ) 16 . 64 ( 0 . 655 ) 17 . 15 ( 0 . 675 ) 3.84 (0.151)4.09 (0.161) 0 . 97 ( 0 . 060 ) 1 . 10 ( 0 . 043 ) 7.92 (0.312)12.70 (0.50) 22 . 23 ( 0 . 875 ) m a x . 6.35 (0.25)9.15 (0.36) 1.52 (0.06) 3.43 (0.135)
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